Np n junction diode theory pdf

Although it is not discussed majorly outside the concept of pn junction diode and sometimes the transistor, a pn junction is an essential topic in semiconductor electronics. Zener diode is a p n junction diode specially designed to operate in the reverse biased mode. A pn junction diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. However, unlike a resistor, a diode does not behave linearly with respect to the applied voltage as the diode has an exponential currentvoltage iv relationship. Hence, the total number of outer electrons in the crystal is 4 n. Silicon a single silicon atom consists of fourteen negatively. However, unlike a resistor, a diode does not behave linearly with respect to the applied voltage as the diode has an exponential currentvoltage. Pn junction theory for semiconductor diodes electronicstutorials. The rectifying property of an alloyed junction diode is wholly controlled at the junction of the n and p regions. Image source forward biasing a pn junction diode is very simple. Lecture 6 biased pn junction diodes and current flow.

A p n junction diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. In the case of normal diodes the diode damages at the break down voltage. A p n junction diode is made by forming a ptype region of material directly next to a n type region. With the diode check function a good diode will show approximately. From the above, it follows that zero power dissipation occurs in an ideal diode. It has a particular voltage known as break down voltage, at which the diode break downs while reverse biased. The recombination at the junction allows battery current to flow through the pn junction diode.

Characteristics of the diode in reverse biased mode, the current flowed in the diode. Pn junction tutorial introduction to pn junction diodes. Diode pn junction when p and n type silicon are brought together during manufacture, a junction is created where the p type and n type materials meet, and holes close to the junction in the p type silicon are attracted into negatively charged n type material at the other side of the junction. By exploring the electrical properties of silicon, it is possible to acquire an understanding of the inner workings of the p n junction. The diode is simple in its basic concept, being formed from the junction of n type and ptype materials, although in reality the manufacture and theory of operation are more complex. Photodetectors p n junction can detect light when reverse biased ptype n type when the light illuminates the p n junction, the photons energy releases free electrons and holes.

V applied voltage across the terminals of the diode. Under bias in scr, jdrift jdiff, but if difference small with respect to absolute values of current. The metal contacts taken out from pregion and n region are called anode and cathode respectively. In addition, pn junction is a vehicle for studying the theory. When the n type semiconductor and ptype semiconductor materials are first joined together a very large density gradient exists between both sides of the pn junction. The crosssection in figure aboveb looks a bit more complex than a simple pn junction. Like any diode, the pn junction diode has two connections or electrodes. Diodes and thyristors a diode one way valve is a pn junction with ptype on one side and n type on the other. P n junction one of the crucial keys to solid state electronics is the nature of the p n junction. Now, if we join the two types of semiconductors ptype and n type together then a new device is formed called as p n junction diode. Pn junction diode and characteristics of pn junction diode. I 0 dark saturation current, the diode leakage current density in the absence of light. Pn junction diode is one of the fundamental elements in electronics. There is a builtin voltage at the pn junction interface that prevents penetration of electrons into the pside and holes into the nside.

A pn junction diode is formed by doping one side of a piece of silicon with a ptype dopant boran and the other side with a ntype dopant phosphorus. Pn and metalsemiconductor junctions the gmu ece department. A pn junction is a boundary or interface between two types of semiconductor materials, ptype and ntype, inside a single crystal of semiconductor. Therefore, the diffused region exhibits an ntype character. A pn junction diode is a twoterminal electronics element. Conversely, electrons in the n type are readily attracted by the positive polarity in the other direction.

Since the n type region has a high electron concentration and the ptype a high hole concentration, electrons diffuse from the n type side to the ptype side. The pn junction is the fundamental building block of the electronic age. Since a junction forms between a p type and n type material it is called as p n junction. I explain what happens when you put together a piece of n. When ptype and n type materials are placed in contact with each other, the junction behaves very differently than either type of material alone. Spring 2003 ee lecture 10, slide 4 idealized junctions. The turn on voltage of a schottky diode is typically smaller than a comparable p n junction since the barrier to forward current flow m s is typically small. The word diode can be explained as di means two and ode is obtained from electrode. This potential difference can alter the flow of majority carriers, so that the pn junction can be used as an opportunity for the diffusion of. A pn junction is the basic building block of many semiconductor devices. Zener theory and design considerations handbook hbd854d rev. Similarly, on the n side of the junction, using a boundary condition. A pn junction is a junction formed by joining ptype and n type semiconductors together in very close contact.

The diode equation gives an expression for the current through a diode as a function of voltage. What are the depletion width in the n region, the depletion width in the pregion, and the builtin potential at 300k. A p n junction is the metallurgical boundary between the n and pregions of a semiconductor crystal. May 05, 2018 in this video i introduce the p n junction. This is the basic construction of the pn junction diode. May 15, 2018 we can create a pn junction by connecting face to face one ptype sand one n type semiconductor crystal block by special techniques. P n junction theory behind p n junction electrical4u. This potential difference can alter the flow of majority carriers, so that the pn junction can be used as an opportunity for the diffusion of electrons and holes. A pn junction diode is formed when a ptype semiconductor is fused to an n type semiconductor creating a potential barrier voltage across the diode junction the effect described in the previous tutorial is achieved without any external voltage being applied to the actual pn junction resulting in the junction being in a state of equilibrium. The p positive side contains an excess of holes, while the n negative side contains an excess of electrons in the outer shells of the electrically neutral atoms there. No generationrecombination in the depletion layer 6. They are also critical to a full analysis of p n junction devices such as bipolar junction transistors and p n junction diodes. Working of pn junction diode with biasing, characteristics.

Semiconductor physics semiconductors and diodessemiconductors. This course can also be taken for academic credit as ecea 5631, part of cu boulders master of science in electrical engineering degree. Working of pn junction diode if an external potential is applied to the terminals of pn junction, it will alter the potential between the p and n regions. At voltages below the breakdown of the junction, there is. Please refer the applet to know the fabrication process of the diode. A pnjunction diode is formed when a ptype semiconductor is fused to an ntype semiconductor creating a potential barrier voltage across the diode junction. P n junctions consist of two semiconductor regions of opposite type. Diode theory the diode is comprised of a ptype material combined with an n type material such as. They are also called p n diodes in analogy with vacuum diodes.

This article provides a more detailed explanation of pn diode behavior than that found in the articles pn junction or diode. You just need to take a battery whose values can be varied from o to v volts, connect its positive terminal to the pside of pn junction diode and then connect the negative terminal of battery to the n side of the pn junction diode. By exploring the electrical properties of silicon, it is possible to acquire an understanding of the inner workings of the pn junction. Iv characteristics uwhenever an electron on the pside moves to the nside, it is replaced by an electron generated through one of the rg centers ohmic ohmic minority minority excess majority carriers alocal excess majority carriers alocal e e excess carriers move to the contact with a relaxation time. A pn junction diode is a twoterminal electronics element, which can be classified as either step graded or linear graded. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, lightemitting diodes and laser diodes. A p n junction is a boundary or interface between two types of semiconductor materials, ptype and n type, inside a single crystal of semiconductor. The barrier increase reduces the majority carrier diffusion to a negligible level.

Octavian florescu 6 electric field and builtin potential 0 0 2 ln i a d n nn q kt. Lecture 5lecture 5 pn junction diodes quantitative analysis. The boltzmann approximation is to say that the resulting current being small compared with the components of this current, we consider that we are still in quasi equilibrium and therefore that the currents equation is still valid by replacing v. The pn junction solidstate device theory electronics. This is the basic construction of the p n junction diode. Lecture 15 the pn junction diode i iv characteristics november. P type and n type semiconductors, takenseparately are of very limited use. This diode may represent effects such as depletion region recombination n2, or tunneling assisted leakage n2 or any other host of nonideal effects. The credit of discovery of the p n junction goes to american physicist russel ohi of bell laboratories. A p n junction diode is formed by doping one side of a piece of silicon with a ptype dopant boran and the other side with a n type dopant phosphorus. It is one of the simplest semiconductor devices as. We can form a p n junction practically by doping one side of a semiconductor crystal by trivalent impurity and another side by pentavalent impurity. Minority carrier concentration becomes vanishingly small.

The term junction refers to the boundary interface where the two regions of the semiconductor meet. Abrupt depletion layer approximation let apply bias and calculate current through the pn junction currents in pn junction from sze, 1981. The number of electrons in the outermost orbit is 4 2s and 2p electrons. This course presents indepth discussion and analysis of pn junction and metalsemiconductor contacts including equilibrium behavior, current and capacitance responses under bias, breakdown, nonrectifying behavior, and surface effect. Chapter 1 semiconductor pn junction theory and applications. A pnjunction is formed when an ntype material is fused together with a ptype material creating a semiconductor diode. A pn diode is a type of semiconductor diode based upon the pn junction. To apply an external voltage, we usually connect 2 metallic contacts at the two ends of the pn junction known as terminals. The diffusion forms a dipole charge layer at the pn junction interface. Jan 29, 2019 pn junction diode is one of the fundamental elements in electronics. A pn junction diode in thermal equilibrium minority carrier concentrationsat the edges of the depletion region. Current flows from the negative terminal of the battery to the n type and on through the ptype and then returns to the positive terminal of the battery.

If we join a piece of p type material to a pieceof n type material such that the crystalstructure remains continuous at the boundary, a pn junction is formed 2. P n junction is also a fundamental building block of many other semiconductor electronic devices such as transistors, solar cells, light emitting diodes, and integrated circuits. P n junctions are formed by joining n type and ptype semiconductor materials, as shown below. Testing a diode is quite simple, particularly if the multimeter used has a diode check function. The result is that some of the free electrons from the donor impurity atoms begi.

It is acting as normal diode while forward biasing. A pn junction diode is a twoterminal electronics element, which can be classified as either. P n junction theory and diodes part i gate problems. Semiconductor pn junction diodes physically, diodes are formed by the interface between two regions of oppositely doped semiconductor i. The objective of this experiment is to measure the iv curve for p n junction diode and to understand the characteristics of p n junction. The pn junction is one of the primary building blocks of semiconductors. Specifically, current will flow readily in one direction forward biased but not in the other reverse biased, creating the basic diode. The diode conducts current in only one direction, and it is made by joining a ptype semiconducting layer to an ntype semiconducting. Similarly, holes flow by diffusion from the ptype side to the n type side. Similarly, on the nside of the junction, using a boundary condition. The np product can be reduced below, as in a reverse biased junction n n p i 2 2 ni department of eecs university of california, berkeley eecs 105 spring 2004, lecture 19 prof. Physics of semiconductor devices p n junction depletion width problem a silicon p n diode has a doping of n d 81015 1 cm3 and n a 210 16 1 cm3. The p n junction is a versatile element, which can be used as a.

Alan doolittle 2 2 ln ln ln i a d bi a i d p n bi n n n q kt v n n n q kt n x n x q kt v movement of electrons and holes when forming the junction for nand1015cm3 in silicon at room temperature. Physics of semiconductor devices pn junction depletion width. With the diode check function a specific known voltage is applied from the meter across the diode. They are referred to as photoelectrons and photoholes the applied voltage separates the photocarriers attracting electrons toward. Explain the formation of potential barrier and depletion layer. The p n junction is the fundamental building block of the electronic age. If the electrons and holes were not charged, this diffusion process. It acts as a diode, which can serve in electronics as a rectifier, logic gate, voltage regulator zener diode, switching or tuner varactor diode. Such junctions show a pronounced rectifying behavior. This frees up space within the lattice for more carriers to flow toward the junction.

Physics of semiconductor devices pn junction depletion. So, in this pn junction tutorial, we will discuss some of the basics of a pn junction, how a pn junction is formed, characteristics of pn junction and many other aspects. Hbd854 zener theory and design considerations handbook. Thus, currents of n type and ptype majority carriers flow toward the junction. As the pn junction is formed, holes from pregion diffuse across the junction and recombine with the electrons in the n region near the junction resulting. This allows electrical current to pass through the junction only in.

In this type of diode, we dope one side of a semiconductor piece with an acceptor impurity and another side with a donor impurity. When a pn junction is reverse biased, the ptype side is made more negative than the n type side. Junction diodes solidstate device theory electronics. Pn junction diode baising and its vi characteristics. Now, if we join the two types of semiconductors ptype and ntype together then a new device is formed called as pn junction diode. Forward biasing a pn junction diode is very simple. I explain what happens when you put together a piece of n and ptype material. This is called the transition region or,more often,the depletion region of the junction.

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